Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
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18 results for Rajan K. Pandey
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- ASICON 2017
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016
Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2014
- DRC 2014
Characterization and optimization of charge trapping in high-k dielectrics
- Eduard Cartier
- Takashi Ando
- et al.
- 2013
- IRPS 2013
First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- H. Dixit
- Chengyu Niu
- et al.
- 2017
- IEEE T-ED
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
- Shahab Siddiqui
- Min Dai
- et al.
- 2017
- JVSTB
Carrier transport in high mobility InAs nanowire junctionless transistors
- Aniruddha Konar
- John Mathew
- et al.
- 2015
- Nano Letters
On the origin of steep i - V nonlinearity in mixed-ionic-electronic-conduction-based access devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2015
- IEEE T-ED