A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
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57 results for Matthew Colburn
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication
- Hsinyu Tsai
- Jed W. Pitera
- et al.
- 2014
- ACS Nano
Simple and versatile methods to integrate directed self-assembly with optical lithography using a polarity-switched photoresist
- Joy Y. Cheng
- Daniel P. Sanders
- et al.
- 2010
- ACS Nano
DSA patterning options for logics and memory applications
- Chi Chun Liu
- Elliott Franke
- et al.
- 2017
- SPIE Advanced Lithography 2017
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Lithographic qualification of high-Transmission mask blank for 10nm node and beyond
- Yongan Xu
- Tom Faure
- et al.
- 2016
- SPIE Advanced Lithography 2016