H. Y. Chang, Geoffrey W. Burr, et al.
IBM J. Res. Dev
We report a systematic study of the feasibility of using directed self-Assembly (DSA) in real product design for 7-nm fin field effect transistor (FinFET) technology. We illustrate a design technology co-optimization (DTCO) methodology and two test cases applying both line/space type and via/cut type DSA processes. We cover the parts of DSA process flow and critical design constructs as well as a full chip capable computational lithography framework for DSA. By co-optimizing all process flow and product design constructs in a holistic way using a computational DTCO flow, we point out the feasibility of manufacturing using DSA in an advanced FinFET technology node and highlight the issues in the whole DSA ecosystem before we insert DSA into manufacturing.
H. Y. Chang, Geoffrey W. Burr, et al.
IBM J. Res. Dev
Hsinyu Tsai, Hiroyuki Miyazoe, et al.
SPIE Advanced Lithography 2016
Hsinyu Tsai, Stefano Ambrogio, et al.
VLSI Technology 2019
Chi Chun Liu, Richard Farrell, et al.
MEMS/NEMS/MOEMS 2019