Radiometric consistency in source specifications for lithography
Alan E. Rosenbluth, Jaione Tirapu Azpiroz, et al.
SPIE Advanced Lithography 2008
We report a systematic study of the feasibility of using directed self-Assembly (DSA) in real product design for 7-nm fin field effect transistor (FinFET) technology. We illustrate a design technology co-optimization (DTCO) methodology and two test cases applying both line/space type and via/cut type DSA processes. We cover the parts of DSA process flow and critical design constructs as well as a full chip capable computational lithography framework for DSA. By co-optimizing all process flow and product design constructs in a holistic way using a computational DTCO flow, we point out the feasibility of manufacturing using DSA in an advanced FinFET technology node and highlight the issues in the whole DSA ecosystem before we insert DSA into manufacturing.
Alan E. Rosenbluth, Jaione Tirapu Azpiroz, et al.
SPIE Advanced Lithography 2008
Kafai Lai, Melih Ozlem, et al.
SPIE Advanced Lithography 2014
Charles Mackin, Pritish Narayanan, et al.
IRPS 2020
Chi Chun Liu, Cristina Estrada-Raygoza, et al.
SPIE Advanced Lithography 2014