Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
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24 results for Edmund M. Sikorski
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Polymer self assembly in semiconductor microelectronics
- C.T. Black
- K.W. Guarini
- et al.
- 2006
- IEDM 2006
Low voltage, scalable nanocrystal FLASH memory fabricated by templated self assembly
- K.W. Guarini
- C.T. Black
- et al.
- 2003
- IEDM 2003
Very high performance 50 nm CMOS at low temperature
- S.J. Wind
- L.T. Shi
- et al.
- 1999
- IEDM 1999
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
- Charles T. Black
- Kathryn W. Guarini
- et al.
- 2004
- IEEE Electron Device Letters
Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
Patterning of CMOS device structures for 40-80nm pitches and beyond
- Sebastian U. Engelmann
- R.M. Martin
- et al.
- 2012
- SPIE Advanced Lithography 2012
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Plasma etching of nanometer-scale self-assembled features
- Ying Zhang
- Charles T. Black
- et al.
- 2008
- ISTC 2008