Strain engineering for fully-depleted SOI devices
- Ali Khakifirooz
- Pranita Kulkarni
- et al.
- 2010
- ECS Transactions
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103 results for Stephen W. Bedell
> 1020 cm-3 n-doping in Ge by Sb/P co-implants: n+/p Diodes with improved rectification
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Applications of epitaxy for semiconductor technology
- Devendra Sadana
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
300mm cold-wall UHV/CVD reactor for low-temperature epitaxial (100) silicon
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
CMOS-integrated small-capacitance germanium waveguide photodetector for optical interconnects
- Solomon Assefa
- Fengnian Xia
- et al.
- 2009
- CLEO 2009
Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2009
- Electrochemical and Solid-State Letters
CMOS-integrated small-capacitance germanium waveguide photodetector for optical interconnects
- Solomon Assefa
- Fengnian Xia
- et al.
- 2009
- CLEO 2009
Integration of nanophotonic devices for on-chip optical interconnects
- Solomon Assefa
- Fengnian Xia
- et al.
- 2009
- OECC 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Opportunities and challenges for germanium and silicon-germanium channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2009
- ECS Meeting 2009