Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2009
- Electrochemical and Solid-State Letters
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12 results for Rainer Loesing
Hafnium oxide gate dielectrics on sulfur-passivated germanium
- Martin M. Frank
- Steven J. Koester
- et al.
- 2006
- Applied Physics Letters