Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
- Sufi Zafar
- Hemanth Jagannathan
- et al.
- 2011
- Applied Physics Letters
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37 results for L.F. Edge
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
Stability of terbium scandate on Si(100)
- Matt Copel
- Nestor Bojarczuk
- et al.
- 2010
- Applied Physics Letters
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2010
- IEEE T-ED
Determination of band offsets, chemical bonding, and microstructure of the (TbxSc1-x) 2 O3 /Si system
- I. Geppert
- M. Eizenberg
- et al.
- 2010
- Journal of Applied Physics
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
- L.F. Edge
- D.G. Schlom
- et al.
- 2004
- Applied Physics Letters