Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
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37 results for L.F. Edge
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition
- H. Jagannathan
- L.F. Edge
- et al.
- 2009
- ECS Meeting 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
- L.F. Edge
- D.G. Schlom
- et al.
- 2004
- Applied Physics Letters