Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures
- B. Peethala
- F. Mont
- et al.
- 2016
- Microelectronic Engineering
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44 results for S. Molis
Post copper CMP hybrid clean process for advanced BEOL technology
- Wei-Tsu Tseng
- Vamsi Devarapalli
- et al.
- 2013
- IEEE Trans Semicond Manuf
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Silane decomposition on Cu interconnects inhibited by ammonia
- E. Todd Ryan
- Steven Molis
- et al.
- 2010
- JES
Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage
- E. Todd Ryan
- Stephen M. Gates
- et al.
- 2008
- Journal of Applied Physics
Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
- A. Grill
- D. Edelstein
- et al.
- 2008
- Journal of Applied Physics
Line resistance and electromigration variations induced by hydrogen-based plasma modifications to the silicon carbonitride/copper interface
- E. Todd Ryan
- Jeremy Martin
- et al.
- 2007
- JES
Measurement of Stresses Using Fluorescence in an Optical Microprobe: Stresses around Indentations in a Chromium‐Doped Sapphire
- Steven E. Molis
- David R. Clarke
- 2005
- JACerS