Hybrid clean approach for post-copper CMP defect reduction
- Wei-Tsu Tseng
- Vamsi Devarapalli
- et al.
- 2013
- ASMC 2013
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22 results for Leo Tai
Post Cu CMP cleaning process evaluation for 32nm and 22nm technology nodes
- Wei-Tsu Tseng
- Donald Canaperi
- et al.
- 2012
- ASMC 2012
Comparative study of CVD TiN vs. ALD TiN for contact metallization in 32nm node and beyond
- Valli Arunachalam
- Filippos Papadatos
- et al.
- 2010
- ADMETA 2010
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS J. Solid State Sci. Technol.
Post copper CMP hybrid clean process for advanced BEOL technology
- Wei-Tsu Tseng
- Vamsi Devarapalli
- et al.
- 2013
- IEEE Trans Semicond Manuf