On the Frequency Dependence of Bulk Trap Generation during AC Stress in Si and SiGe RMG P-FinFETs
- Narendra Parihar
- Uma Sharma
- et al.
- 2019
- IRPS 2019
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45 results for Richard G. Southwick
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- Miaomiao Wang
- Jingyun Zhang
- et al.
- 2019
- IRPS 2019
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- Ruqiang Bao
- Richard G. Southwick
- et al.
- 2018
- VLSI Technology 2018
Validity and Application of the TCR Method to MOL contactS
- E. Milosevic
- Vimal Kamineni
- et al.
- 2018
- IITC 2018
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics
- Miaomiao Wang
- Richard G. Southwick
- et al.
- 2018
- IRPS 2018
Understanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- VLSI Technology 2017
Hot carrier reliability in ultra-scaled sige channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2017
- ASICON 2017
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- ASICON 2017
Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IRPS 2017
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016