Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with I_d-V_d characteristics

In this work, we present an experimental method to obtain the location of the pinch-off point in a MOSFET biased in saturation. The proposed methodology, applicable to nanoscale devices, enables lateral profiling of hot-carrier-induced defects directly from measured data without the need of extensive computer simulation or complicated analytical modeling.