Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
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45 results for Richard G. Southwick
Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, Part-I: DC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- Narendra Parihar
- Uma Sharma
- et al.
- 2018
- IEEE T-ED
Frequency-modulated charge pumping with extremely high gate leakage
- Jason T. Ryan
- Jibin Zou
- et al.
- 2015
- IEEE T-ED