SiGe Gate-All-around Nanosheet Reliability
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2022
- IRPS 2022
Publications
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21 results for Jingyun Zhang
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- Su-Chen Fan
- Ruilong Xie
- et al.
- 2020
- IITC 2020
Development of SiGe Indentation Process Control to Enable Stacked Nanosheet FET Technology
- Dexin Kong
- Daniel Schmidt
- et al.
- 2020
- ASMC 2020
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
A new technique for evaluating stacked nanosheet inner spacer TDDB reliability
- Tian Shen
- K. Watanabe
- et al.
- 2020
- IRPS 2020
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- Miaomiao Wang
- Jingyun Zhang
- et al.
- 2019
- IRPS 2019
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
A Review of the Gate-All-Around Nanosheet FET Process Opportunities
- Sagarika Mukesh
- Jingyun Zhang
- 2022
- Electronics (Switzerland)