High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
Publications
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21 results for Jingyun Zhang
Scaling opportunities for Gate-All-Around: A patterning perspective
- I. Seshadri
- E. Miller
- et al.
- 2023
- IEDM 2023
A Review of the Gate-All-Around Nanosheet FET Process Opportunities
- Sagarika Mukesh
- Jingyun Zhang
- 2022
- Electronics (Switzerland)
SiGe Gate-All-around Nanosheet Reliability
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2022
- IRPS 2022
Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- Shogo Mochizuki
- M. Bhuiyan
- et al.
- 2020
- IEDM 2020
Improved Air Spacer for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- IEEE Transactions on Electron Devices
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- Su-Chen Fan
- Ruilong Xie
- et al.
- 2020
- IITC 2020
Development of SiGe Indentation Process Control to Enable Stacked Nanosheet FET Technology
- Dexin Kong
- Daniel Schmidt
- et al.
- 2020
- ASMC 2020