Silicon dioxide defects induced by metal impurities
- H. Dallaporta
- M. Liehr
- et al.
- 1990
- Physical Review B
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49 results for Michael Liehr
Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4
- C.M. Greenlief
- M. Offenberg
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High resolution electron energy loss spectroscopic characterization of insulators for Si technology
- M. Liehr
- P.A. Thiry
- 1990
- Journal of Electron Spectroscopy and Related Phenomena
integrated thermal chemical vapor deposition processing for Si technology
- M. Liehr
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Diffuse and abrupt interface formation studied by high resolution electron energy loss spectroscopy
- P.A. Thiry
- R. Sporken
- et al.
- 1990
- Superlattices and Microstructures
Defect formation in SiO2/Si(100) by metal diffusion and reaction
- M. Liehr
- H. Dallaporta
- et al.
- 1988
- Applied Physics Letters
Stacking-fault-induced defect creation in SiO2 on Si(100)
- M. Liehr
- G.B. Bronner
- et al.
- 1988
- Applied Physics Letters
Investigation of inas and gasb by high-resolution electron energy-loss spectroscopy
- P.A. Thiry
- J.L. Longueville
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Electrical properties of vacuum annealed Si surfaces
- J. Werner
- M. Renier
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Kinetics of high-temperature thermal decomposition of Si0 2 on Si(100)
- M. Liehr
- J.E. Lewis
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films