Characterization of HfBx films deposited by r.f. diode and r.f. magnetron sputtering
- W.-Y. Lee
- Graham Olive
- et al.
- 1988
- Thin Solid Films
Publications
Date
Featured collections
Popular topics
71 results for Vaughn R. Deline
High Tc YBa2Cu3O7-x thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide target
- W.-Y. Lee
- J.R. Salem
- et al.
- 1988
- Applied Physics Letters
Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Journal of Applied Physics
Boron, phosphorus, and arsenic diffusion in tisi2
- P. Gas
- V.R. Deline
- et al.
- 1986
- Journal of Applied Physics
The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solution
- T.G. Finstad
- D.D. Anfiteatro
- et al.
- 1986
- Thin Solid Films
The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1-xAs layers and heterostructures
- T.F. Kuech
- E. Veuhoff
- et al.
- 1986
- Journal of Crystal Growth
RAPID THERMAL ANNEALING OF Zn**6**4 AND Mg**2**4 IMPLANTS IN GaAs.
- S. Tiwari
- J.C. DeLuca
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
Reaction of silicon with films of CoNi alloys: Phase separation of the monosilicides and nucleation of the disilicides
- F.M. D'Heurle
- D.D. Anfiteatro
- et al.
- 1985
- Thin Solid Films
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- R. Kalish
- G.S. Oehrlein
- et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B