The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1-xAs layers and heterostructures
- T.F. Kuech
- E. Veuhoff
- et al.
- 1986
- Journal of Crystal Growth
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71 results for Vaughn R. Deline
Reaction of silicon with films of CoNi alloys: Phase separation of the monosilicides and nucleation of the disilicides
- F.M. D'Heurle
- D.D. Anfiteatro
- et al.
- 1985
- Thin Solid Films
Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing
- R. Kalish
- G.S. Oehrlein
- et al.
- 1985
- Nuclear Inst. and Methods in Physics Research, B
Summary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couples
- H.-O. Blom
- S. Berg
- et al.
- 1985
- JVSTA
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
Rapid thermal annealing of boron-implanted silicon using an ultrahigh power arc lamp
- R.T. Hodgson
- V.R. Deline
- et al.
- 1984
- Applied Physics Letters
Instrumental cross-contamination in the Cameca IMS-3F secondary ion microscope
- Vaughn R. Deline
- 1983
- Nuclear Instruments and Methods In Physics Research
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics
Investigation of the silicon beading phenomena during zone-melting recrystallization
- Z.A. Weinberg
- V.R. Deline
- et al.
- 1983
- Applied Physics Letters