Summary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couples
- H.-O. Blom
- S. Berg
- et al.
- 1985
- JVSTA
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71 results for Vaughn R. Deline
DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
Rapid thermal annealing of boron-implanted silicon using an ultrahigh power arc lamp
- R.T. Hodgson
- V.R. Deline
- et al.
- 1984
- Applied Physics Letters
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
RAPID ANNEALING OF SILICON.
- R.T. Hodgson
- V.R. Deline
- et al.
- 1983
- MRS Proceedings 1983
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- VLSI Science and Technology 1983
Instrumental cross-contamination in the Cameca IMS-3F secondary ion microscope
- Vaughn R. Deline
- 1983
- Nuclear Instruments and Methods In Physics Research
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics
Investigation of the silicon beading phenomena during zone-melting recrystallization
- Z.A. Weinberg
- V.R. Deline
- et al.
- 1983
- Applied Physics Letters