Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
Publications
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23 results for Emanuele Uccelli
Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- SNW 2014
Electrical characterisation of InGaAs on insulator structures
- K. Cherkaoui
- Y.Y. Gomeniuk
- et al.
- 2015
- Microelectronic Engineering
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- Kristy J. Kormondy
- Stefan Abel
- et al.
- 2015
- Microelectronic Engineering
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
- Lukas Czornomaz
- Emanuele Uccelli
- et al.
- 2015
- VLSI Technology 2015
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- IEEE J-EDS
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- EUROSOI-ULIS 2015
Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors
- V. Djara
- Lukas Czornomaz
- et al.
- 2015
- EUROSOI-ULIS 2015