Physical and electrical properties of scaled gate stacks on Si/passivated In0.53Ga0.47As
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- ECS Transactions
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23 results for Emanuele Uccelli
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012