Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

Date

Start

End

Featured collections

Popular topics

72 results for Stephen M. Gates

Atomic layer epitaxy of Si on Ge(100) using Si₂Cl₆ and atomic hydrogen
- - D.D. Koleske
  - S. Gates
- 1994
- Applied Physics Letters
Atomic H abstraction of surface H on Si: An Eley-Rideal mechanism?
- - D.D. Koleske
  - S. Gates
  - et al.
- 1994
- The Journal of Chemical Physics
Surface morphology of Si on Si(100) grown below 500°C using H/Cl exchange chemistry
- - D.D. Koleske
  - S. Gates
- 1993
- Journal of Applied Physics
Dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?
- - S. Gates
  - D.D. Koleske
- 1993
- Thin Solid Films
Potential Si atomic layer epitaxy processes using halogenated Si precursors
- - D.D. Koleske
  - S. Gates
  - et al.
- 1993
- Thin Solid Films
Epitaxial Si films on Ge(100) grown via H/Cl exchange
- - S. Gates
  - D.D. Koleske
  - et al.
- 1993
- Applied Physics Letters
Facile abstraction of chemisorbed D on Si(100) by atomic H
- - D.D. Koleske
  - S. Gates
  - et al.
- 1993
- The Journal of Chemical Physics
Kinetics of atomic hydrogen+adsorbed Br reactions on Si(100) and Si(111) surfaces
- - D.D. Koleske
  - S. Gates
- 1993
- The Journal of Chemical Physics
Influence of Si surface structure on reaction mechanism: Atomic hydrogen+adsorbed Br
- - D.D. Koleske
  - S. Gates
- 1993
- The Journal of Chemical Physics
Hydrogen coverage during Si growth from SiH₄ and Si ₂H₆
- - S. Gates
  - S.K. Kulkarni
- 1992
- Applied Physics Letters