Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
- D.D. Koleske
- S. Gates
- 1994
- Applied Physics Letters
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Atomic H abstraction of surface H on Si: An Eley-Rideal mechanism?
- D.D. Koleske
- S. Gates
- et al.
- 1994
- The Journal of Chemical Physics
Surface morphology of Si on Si(100) grown below 500°C using H/Cl exchange chemistry
- D.D. Koleske
- S. Gates
- 1993
- Journal of Applied Physics
Dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?
- S. Gates
- D.D. Koleske
- 1993
- Thin Solid Films
Potential Si atomic layer epitaxy processes using halogenated Si precursors
- D.D. Koleske
- S. Gates
- et al.
- 1993
- Thin Solid Films
Epitaxial Si films on Ge(100) grown via H/Cl exchange
- S. Gates
- D.D. Koleske
- et al.
- 1993
- Applied Physics Letters
Facile abstraction of chemisorbed D on Si(100) by atomic H
- D.D. Koleske
- S. Gates
- et al.
- 1993
- The Journal of Chemical Physics
Kinetics of atomic hydrogen+adsorbed Br reactions on Si(100) and Si(111) surfaces
- D.D. Koleske
- S. Gates
- 1993
- The Journal of Chemical Physics
Influence of Si surface structure on reaction mechanism: Atomic hydrogen+adsorbed Br
- D.D. Koleske
- S. Gates
- 1993
- The Journal of Chemical Physics
Hydrogen coverage during Si growth from SiH4 and Si 2H6
- S. Gates
- S.K. Kulkarni
- 1992
- Applied Physics Letters