Growth of Si on Si(100) via H/Cl exchange and the effect of interfacial boron
- D.D. Koleske
- S. Gates
- et al.
- 1992
- Journal of Applied Physics
Publications
Date
Featured collections
Popular topics
72 results for Stephen M. Gates
Elemental marking of Si on Si(100) interfaces
- S. Gates
- D.D. Koleske
- 1992
- Applied Physics Letters
Diffusion effects and nucleation of thin film boron nitride growth from borazine on the Si(100) surface
- S. Gates
- C.M. Chiang
- et al.
- 1992
- Journal of Applied Physics
Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH4 and Si2H6
- S. Gates
- 1992
- Journal of Crystal Growth
Low-temperature adsorption and decomposition of borazine on the Si(100)-(2 × 1) surface
- Chiang Chao-Ming
- Stephen M. Gates
- et al.
- 1992
- Surface Science
Precursors for Si atomic layer epitaxy: Real time adsorption studies on Si(100)
- D.D. Koleske
- S. Gates
- et al.
- 1992
- Applied Physics Letters
Comparison of chemical schemes for Si atomic layer epitaxy
- S. Gates
- 1992
- Journal of Physical Chemistry
Kinetics of surface reactions in very low-pressure chemical vapor deposition of Si from SiH4
- S. Gates
- S.K. Kulkarni
- 1991
- Applied Physics Letters
Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfaces
- S. Gates
- C.M. Chiang
- 1991
- Chemical Physics Letters
Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °C
- S. Gates
- C.M. Greenlief
- et al.
- 1990
- The Journal of Chemical Physics