Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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72 results for Stephen M. Gates

Growth of Si on Si(100) via H/Cl exchange and the effect of interfacial boron
- - D.D. Koleske
  - S. Gates
  - et al.
- 1992
- Journal of Applied Physics
Elemental marking of Si on Si(100) interfaces
- - S. Gates
  - D.D. Koleske
- 1992
- Applied Physics Letters
Diffusion effects and nucleation of thin film boron nitride growth from borazine on the Si(100) surface
- - S. Gates
  - C.M. Chiang
  - et al.
- 1992
- Journal of Applied Physics
Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH₄ and Si₂H₆
- - S. Gates
- 1992
- Journal of Crystal Growth
Low-temperature adsorption and decomposition of borazine on the Si(100)-(2 × 1) surface
- - Chiang Chao-Ming
  - Stephen M. Gates
  - et al.
- 1992
- Surface Science
Precursors for Si atomic layer epitaxy: Real time adsorption studies on Si(100)
- - D.D. Koleske
  - S. Gates
  - et al.
- 1992
- Applied Physics Letters
Comparison of chemical schemes for Si atomic layer epitaxy
- - S. Gates
- 1992
- Journal of Physical Chemistry
Kinetics of surface reactions in very low-pressure chemical vapor deposition of Si from SiH₄
- - S. Gates
  - S.K. Kulkarni
- 1991
- Applied Physics Letters
Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfaces
- - S. Gates
  - C.M. Chiang
- 1991
- Chemical Physics Letters
Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °C
- - S. Gates
  - C.M. Greenlief
  - et al.
- 1990
- The Journal of Chemical Physics