Extraction of interface trap density in high-k/Ge gate stacks and determination of the charge neutrality level
- D. Bozyigit
- C. Rossel
- 2009
- DRC 2009
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119 results for Christophe Rossel
Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Preparation of SrRuO3 films for advanced CMOS metal gates
- K. Fröhlich
- K. Hušeková
- et al.
- 2004
- Materials Science in Semiconductor Processing
Thermal stability of SrRuO3 epitaxial layers under forming-gas anneal
- D. Halley
- C. Rossel
- et al.
- 2004
- Materials Science and Engineering: B
Growth of perovskites with crystalline interfaces on Si(100)
- G.J. Norga
- A. Guiller
- et al.
- 2003
- MRS Proceedings 2003
Fabrication of ultrasensitive piezoresistive cantilevers for torque magnetometry
- J. Brugger
- M. Willemin
- et al.
- 1997
- TRANSDUCERS 1997
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials