A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
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32 results for Richard A. Wachnik
Copper dual damascene wiring for sub-0.25 μm CMOS technology
- J. Heidenreich
- D. Edelstein
- et al.
- 1998
- IITC 1998
Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud-via interconnections
- H.S. Rathore
- R. Filippi
- et al.
- 1992
- SPIE Microelectronic Processing 1992
Modeling of Resistance in FinFET Local Interconnect
- Ning Lu
- Richard A. Wachnik
- 2015
- IEEE TCAS-I
Gate stack resistance and limits to CMOS logic performance
- Richard A. Wachnik
- Sungjae Lee
- et al.
- 2014
- IEEE TCAS-I
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- Jin-Ping Han
- Takashi Shimizu
- et al.
- 2011
- Japanese Journal of Applied Physics
Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems
- B.P. Gaucher
- B. Floyd
- et al.
- 2006
- Semiconductor Science and Technology
The effect of current density, stripe length, stripe width, and temperature on resistance saturation during electromigration testing
- R. Filippi
- R.A. Wachnik
- et al.
- 2002
- Journal of Applied Physics
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Degradation of bipolar transistors under high current stress at 300 K
- R.A. Wachnik
- T. Bucelot
- et al.
- 1988
- Journal of Applied Physics