Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
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32 results for Richard A. Wachnik
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
The effect of current density, stripe length, stripe width, and temperature on resistance saturation during electromigration testing
- R. Filippi
- R.A. Wachnik
- et al.
- 2002
- Journal of Applied Physics
Breakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Copper dual damascene wiring for sub-0.25 μm CMOS technology
- J. Heidenreich
- D. Edelstein
- et al.
- 1998
- IITC 1998
Full copper wiring in a sub-0.25 μm CMOS ULSI technology
- D. Edelstein
- J. Heidenreich
- et al.
- 1997
- IEDM 1997
Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud-via interconnections
- H.S. Rathore
- R. Filippi
- et al.
- 1992
- SPIE Microelectronic Processing 1992
Degradation of bipolar transistors under high current stress at 300 K
- R.A. Wachnik
- T. Bucelot
- et al.
- 1988
- Journal of Applied Physics