Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
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32 results for Jeffrey B. Johnson
Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications
- C. Kothandaraman
- X. Chen
- et al.
- 2015
- IRPS 2015
A comparative study of fin-last and fin-first SOI FinFETs
- Darsen Lu
- Josephine Chang
- et al.
- 2013
- SISPAD 2013
Fin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs
- Abhijeet Paul
- Chun-Chen Yeh
- et al.
- 2013
- S3S 2013
An efficient and accurate schematic transistor model of FinFET parasitic elements
- Ning Lu
- Terence B. Hook
- et al.
- 2013
- NSTI-Nanotech 2013
A simple hardware-based statistical model on 65nm SOI CMOS technology
- Q. Liang
- J.B. Johnson
- et al.
- 2007
- ISDRS 2007
SiGe BiCMOS trends - today and tomorrow
- J. Dunn
- D.L. Harame
- et al.
- 2006
- CICC 2006
P-i-n diodes for monolithic millimeter wave BiCMOS applications
- Bradley A. Orner
- Qizhi Liu
- et al.
- 2006
- ISTDM 2006
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
A simulation study on thin SOI bipolar transistors with fully or partially depleted collector
- Qiqing Ouyang
- Jin Cai
- et al.
- 2002
- BCTM 2002