ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
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23 results for Zhengmao Zhu
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
SIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis
Extremely thin SOI (ETSOI) technology: Past, present, and future
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2010
- IEEE International SOI Conference 2010
Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- VLSI-TSA 2010
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
- A. Madan
- J. Li
- et al.
- 2008
- ECS Meeting 2008
Recent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008