Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
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150 results for Matthew Copel
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
- S. Guha
- E. Cartier
- et al.
- 2000
- Applied Physics Letters
Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
- Ryan C. Smith
- Noel Hoilien
- et al.
- 2000
- JES
Optimizing fabrication of buried oxide channel field effect transistors
- A.G. Schrott
- J. Misewich
- et al.
- 2000
- MRS Proceedings 2000
Structure and stability of ultrathin zirconium oxide layers on Si(001)
- M. Copel
- M. Gribelyuk
- et al.
- 2000
- Applied Physics Letters
High-resolution depth profiling in ultrathin Al2O3 films on Si
- E. Gusev
- M. Copel
- et al.
- 2000
- Applied Physics Letters
Nucleation of chemical vapor deposited silicon nitride on silicon dioxide
- M. Copel
- P.R. Varekamp
- et al.
- 1999
- Applied Physics Letters
Ultrathin nitrided gate dielectrics by plasma-assisted processing
- E. Gusev
- D.A. Buchanan
- et al.
- 1999
- Microelectronic Engineering
Compensation doping of Ba0.7Sr0.3TiO3 thin films
- M. Copel
- J.D. Baniecki
- et al.
- 1998
- Applied Physics Letters