Control of homoepitaxial Si nanostructures by locally modified surface reactivity
- A. Portavoce
- R. Hull
- et al.
- 2008
- Applied Physics Letters
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150 results for Matthew Copel
Advanced ion energy loss models: Applications to subnanometric resolution elemental depth profiling
- R.P. Pezzi
- P.L. Grande
- et al.
- 2007
- Surface Science
Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
Single-crystalline Germanium thin films by electrodeposition and solid-phase epitaxy
- Q. Huang
- S.W. Bedell
- et al.
- 2007
- Electrochemical and Solid-State Letters
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering
Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress
- L. Krusin-Elbaum
- C. Cabral
- et al.
- 2007
- Applied Physics Letters
Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters
Atomic transport and integrity of Al2O3(2.0 nm)/HfO2(2.5 nm) gate stacks on Si
- L. Miotti
- R.P. Pezzi
- et al.
- 2007
- Applied Physics Letters
Solution-based processing of the phase-change material KSb 5S8
- David B. Mitzi
- Simone Raoux
- et al.
- 2006
- Chemistry of Materials
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006