Wet-Etching-Boosted Charge Storage in 1D Nitride-Based Systems for Imitating Biological Synaptic Behaviors
- Chang-Hsun Huang
- Chia-Yi Wu
- et al.
- 2023
- Advanced Functional Materials
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15 results for Ko-Tao Lee
Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM
- Paul Solomon
- Douglas M. Bishop
- et al.
- 2021
- IRPS 2021
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator
- S. Kim
- John A. Ott
- et al.
- 2019
- IEDM 2019
ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing
- Jianshi Tang
- Douglas M. Bishop
- et al.
- 2018
- IEDM 2018
Electron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017
GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
- Ko-Tao Lee
- Can Bayram
- et al.
- 2017
- IEEE Electron Device Letters
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
A four-FET method for extracting mobility in FETs without field oxide
- Amlan Majumdar
- Ko-Tao Lee
- et al.
- 2014
- IEEE T-ED