Amlan Majumdar
IEEE Electron Device Letters
Many fabricated III-V MOSFETs have electrically thin field oxide (FOX) that leads to parasitic currents and parasitic capacitances. When extracting long-channel mobility of such devices using the conventional two-FET method, some of these parasitic components are not subtracted out. In this paper, we present a simple four-FET method for extracting long-channel mobility that works well even when the equivalent oxide thickness (EOT) of the FOX is equal to the EOT of the FET gate oxide.
Amlan Majumdar
IEEE Electron Device Letters
Amlan Majumdar
Journal of Applied Physics
S. Lee, Cheng-Wei Cheng, et al.
IEDM 2018
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008