Highly selective sputtering of silicon from TiSi2 at elevated temperature
- J.M.E. Harper
- S. Motakef
- et al.
- 1992
- Applied Physics Letters
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23 results for D. Moy
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
Electromigration in a two-level Al-Cu interconnection with W studs
- T. Kwok
- C. Tan
- et al.
- 1990
- VMIC 1990
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections
- R.V. Joshi
- D. Moy
- et al.
- 1989
- Applied Physics Letters
Two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM
- D. Moy
- M. Schadt
- et al.
- 1989
- VMIC 1989
TIN formed by ion beam nitriding of TiSi2
- S.E. Harnstrarn
- D. Moy
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
EXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986