FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
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33 results for X. Wang
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
- X. Chen
- S. Samavedam
- et al.
- 2008
- VLSI Technology 2008
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Simulation study of multiple FIN FinFET design for 32nm technology node and beyond
- Xinlin Wang
- Andres Bryant
- et al.
- 2007
- SISPAD 2007
Challenges and opportunities for high performance 32 nm CMOS technology
- J. Sleight
- I. Lauer
- et al.
- 2006
- IEDM 2006
Investigation of FinFET devices for 32nm technologies and beyond
- H. Shang
- L. Chang
- et al.
- 2006
- VLSI Technology 2006
Energy optimality and variability in subthreshold design
- Scott Hanson
- Bo Zhai
- et al.
- 2006
- ISLPED 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
Silicon CMOS devices beyond scaling
- Wilfried Haensch
- Edward J. Nowak
- et al.
- 2006
- IBM J. Res. Dev