Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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33 results for X. Wang

0.026μm² high performance Embedded DRAM in 22nm technology for server and SOC applications
- - C. Pei
  - G. Wang
  - et al.
- 2014
- IEDM 2014
High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- - K. Henson
  - H. Bu
  - et al.
- 2008
- IEDM 2008
On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages
- - Shu-Jen Han
  - Xinlin Wang
  - et al.
- 2008
- IEDM 2008
(110) Channel, SiON gate-dielectric PMOS with record high I_on=1 mA/μm through channel stress and source drain external resistance (R _ext) engineering
- - B. Yang
  - A. Waite
  - et al.
- 2007
- IEDM 2007
Challenges and opportunities for high performance 32 nm CMOS technology
- - J. Sleight
  - I. Lauer
  - et al.
- 2006
- IEDM 2006
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- - J. Cai
  - K. Rim
  - et al.
- 2004
- IEDM 2004
Reverse temperature dependence of circuit performance in high- k/metal-gate technology
- - Shu-Jen Han
  - Dechao Guo
  - et al.
- 2009
- IEEE Electron Device Letters
Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs
- - Amlan Majumdar
  - Xinlin Wang
  - et al.
- 2009
- IEEE Electron Device Letters
Gate-dielectric permitivity and metal-gate work-function tradeoff in L_met = 25 nm PDSOI device characteristics
- - Dechao Guo
  - Andres Bryant
  - et al.
- 2006
- IEEE Electron Device Letters