Scaling of SiGe heterojunction bipolar transistors
- Jae-Sung Rieh
- Andreas Stricker
- et al.
- 2005
- Proceedings of the IEEE
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50 results for Greg Freeman
Proton radiation response of monolithic millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology
- Wei-Min Lance Kuo
- Yuan Lu
- et al.
- 2004
- IEEE TNS
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
- Jae-Sung Rieh
- Basanth Jagannathan
- et al.
- 2004
- IEEE T-MTT
Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications
- G. Freeman
- B. Jagannathan
- et al.
- 2003
- International Journal of High Speed Electronics and Systems
100 GHz dynamic frequency divider in SiGe bipolar technology
- A. Rylyakov
- L. Klapproth
- et al.
- 2003
- Electronics Letters
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- S. Subbanna
- L. Larson
- et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- D.R. Greenberg
- S. Sweeney
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 1999
- IMS 1999