0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
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17 results for P. Parries
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
A 500MHz random cycle 1.5ns-latency, SOI embedded DRAM macro featuring a 3T micro sense amplifier
- John Barth
- William Reohr
- et al.
- 2007
- ISSCC 2007
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
Trade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997
Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond
- Balaji Jayaraman
- Sneha Gupta
- et al.
- 2012
- ICICDT 2012
Embedded memory considerations in SOI
- G. Wang
- Carl Radens
- et al.
- 2010
- IEEE International SOI Conference 2010
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
- Puneet Goyal
- Sneha Gupta
- et al.
- 2010
- IEEE International SOI Conference 2010