Access transistor design and optimization for 65/45nm high performance SOI eDRAM
- G. Wang
- P. Parries
- et al.
- 2008
- VLSI-TSA 2008
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17 results for P. Parries
A one MB cache subsystem prototype with 2GHz embedded DRAMs in 45nm SOI CMOS
- Peter Klim
- John Barth
- et al.
- 2008
- VLSI Circuits 2008
A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
- John Barth
- William R. Reohr
- et al.
- 2008
- IEEE Journal of Solid-State Circuits
A 500MHz random cycle 1.5ns-latency, SOI embedded DRAM macro featuring a 3T micro sense amplifier
- John Barth
- William Reohr
- et al.
- 2007
- ISSCC 2007
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
A 0.168μm 2/0.11μm 2 highly scalable high performance embedded DRAM cell for 90/65-nm logic applications
- G. Wang
- P. Parries
- et al.
- 2005
- VLSI Technology 2005
Trade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997