Improved control of momentary rapid thermal annnealing for silicidation
- P. Agnello
- A. Fink
- 1993
- Journal of Electronic Materials
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49 results for P. Agnello
Growth Rate Enhancement of Heavy n- and P-Type Doped Silicon Deposited by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1993
- JES
Effects of Trace Surface Oxidation in Low Temperature Epitaxy Grown from Dichlorosilane
- T.O. Sedgwick
- P. Agnello
- et al.
- 1993
- JES
Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation
- Keith A. Jenkins
- P. Agnello
- et al.
- 1992
- Applied Physics Letters
Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Conditions for an Oxide-Free Si Surface for Low-Temperature Processing: Steady-State Boundary
- P. Agnello
- T.O. Sedgwick
- 1992
- JES
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters