A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
- X. Chen
- S. Samavedam
- et al.
- 2008
- VLSI Technology 2008
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34 results for K. Stein
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
A 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007
Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006
Pushing the performance limits of SiGe HBT technology
- Marwan Khater
- Thomas Adam
- et al.
- 2006
- ECS Meeting 2006
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
High performance thick copper inductors in an RF technology
- Kunal Vaed
- William Graham
- et al.
- 2004
- SPIE Micromachining and Microfabrication 2004
Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate
- Jin Cai
- Mahender Kumar
- et al.
- 2003
- BCTM 2003
Fully-depleted-collector polysilicon-emitter SiGe-base vertical bipolar transistor on SOI
- Jin Cai
- A. Ajmera
- et al.
- 2002
- VLSI Technology 2002
RF components implemented in an analog SiGe bipolar technology
- J.N. Burghartz
- M. Soyuer
- et al.
- 1996
- BCTM 1996