High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 vYanning SunAmlan Majumdaret al.2014IEDM 2014
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solutionY. SunA. Majumdaret al.2013IEDM 2013
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applicationsS. KrishnanU. Kwonet al.2011IEDM 2011
Assessment of fully-depleted planar CMOS for low power complex circuit operationZhibin RenS. Mehtaet al.2011IEDM 2011
Full metal gate with borderless contact for 14 nm and beyondSoon-Cheon SeoL.F. Edgeet al.2011VLSI Technology 2011
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sourcesZhen ZhangF. Pagetteet al.2010VLSI-TSA 2010
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copperB. GreeneQ. Lianget al.2009VLSI Technology 2009
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gateK. HensonH. Buet al.2008IEDM 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressorB. YangR. Takalkaret al.2008IEDM 2008