Novel techniques for scaling deep trench DRAM capacitor technology to 0.11 μm and beyond
- P.S. Parkinson
- K. Settlemyer
- et al.
- 2003
- VLSI-TSA 2003
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23 results for D.-G. Park
Robust TaN x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
- H. Kim
- C. Detavenier
- et al.
- 2005
- Journal of Applied Physics
The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
- H. Kim
- C. Lavoie
- et al.
- 2004
- Journal of Applied Physics