Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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35 results for Dureseti Chidambarrao
Vertically self-aligned buried junction formation for ultrahigh-density DRAM applications
- J. Beintner
- Y. Li
- et al.
- 2004
- IEEE Electron Device Letters
Nitrogen implantation and diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 1999
- MRS Spring Meeting 1999
Gate Resistance Test Structures Bounded by Local Layout Density to Characterize Metal Gate Height Variation in 7nm FinFET Technology
- Justin Zhu
- Katsunori Onishi
- et al.
- 2024
- IEEE MDTS 2024
Identification and sensitivity analysis of a correlated ground rule system (design arc)
- Eric Eastman
- Dureseti Chidambarrao
- et al.
- 2017
- SPIE Advanced Lithography 2017
Reduction of RTA-driven intra-die variation via model-based layout optimization
- J.C. Scott
- O. Gluschenkov
- et al.
- 2009
- VLSI Technology 2009
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Dual stress liner enhancement in hybrid orientation technology
- C. Sheraw
- M. Yang
- et al.
- 2005
- VLSI Technology 2005