High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Publications
Date
Featured collections
Popular topics
27 results for Siyu Koswatta
Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies
- Siyu Koswatta
- N. Mavilla
- et al.
- 2015
- IEDM 2015
Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around
- Aaron D. Franklin
- Siyuranga O. Koswatta
- et al.
- 2012
- IEDM 2012
1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing
- Siyuranga O. Koswatta
- Steven J. Koester
- et al.
- 2009
- IEDM 2009
Exciton generation in suspended carbon nanotube FETs: A computational study
- Siyuranga O. Koswatta
- Vasili Perebeinos
- et al.
- 2007
- IEDM 2007
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
Dopant-segregation technique for leakage reduction and performance improvement in trigate transistors without raised source/drain epitaxy
- Fei Liu
- Zhen Zhang
- et al.
- 2014
- IEEE Electron Device Letters
GIDL in doped and undoped FinFET devices for low-leakage applications
- Pranita Kerber
- Qintao Zhang
- et al.
- 2013
- IEEE Electron Device Letters
Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons
- Qin Zhang
- Yeqing Lu
- et al.
- 2010
- IEEE Electron Device Letters