RF circuit design aspects of spiral inductors on silicon
- Joachim N. Burghartz
- D. Edelstein
- et al.
- 1998
- IEEE Journal of Solid-State Circuits
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57 results for Mehmet Soyuer
A 5.5-GHz low noise amplifier in SiGe BiCMOS
- Herschel A. Ainspan
- Charles S. Webster
- et al.
- 1998
- ESSCIRC 1998
Fully-monolithic 3V SiGe differential voltage-controlled oscillators for 5GHz and 17GHz wireless applications
- Jean-Olivier Plouchart
- Bernd-Ulrich Klepser
- et al.
- 1998
- ESSCIRC 1998
SiGe power HBT's for low-voltage, high-performance RF applications
- Joachim N. Burghartz
- Jean-Olivier Plouchart
- et al.
- 1998
- IEEE Electron Device Letters
RF circuit design aspects of spiral inductors on silicon
- J.N. Burghartz
- D. Edelstein
- et al.
- 1998
- ISSCC 1998
Novel substrate contact structure for high-Q silicon-integrated spiral inductors
- J.N. Burghartz
- A.E. Ruehli
- et al.
- 1997
- IEDM 1997
5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology
- M. Soyuer
- J.O. Plouchart
- et al.
- 1997
- RFIC 1997
LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator
- Mehmet Soyuer
- Joachim N. Burghartz
- et al.
- 1997
- IEEE Journal of Solid-State Circuits
Integrated RF components in a SiGe bipolar technology
- Joachim N. Burghartz
- Mehmet Soyuer
- et al.
- 1997
- IEEE Journal of Solid-State Circuits
6.25-GHz low DC power low-noise amplifier in SiGe
- H. Ainspan
- M. Soyuer
- et al.
- 1997
- CICC 1997