Temperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated Ge
- Steven J. Koester
- Martin M. Frank
- et al.
- 2006
- ISTDM 2006
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100 results for Steven J. Koester
A 19-gb/s, 1.8-v optical receiver front-end comprised of a Ge-on-SOI photodiode and a CMOS transimpedance amplifier
- C.L. Schow
- L. Schares
- et al.
- 2006
- ECOC 2006
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications
- S.J. Koester
- L. Schares
- et al.
- 2006
- ECS Meeting 2006
Optical receivers in CMOS using Ge-on-SOI photodiodes
- C.L. Schow
- S.J. Koester
- et al.
- 2006
- LEOS 2006
A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC
- C.L. Schow
- L. Schares
- et al.
- 2006
- IEEE Photonics Technology Letters
Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers
- S.J. Koester
- L. Schares
- et al.
- 2006
- GFP 2006
Hafnium oxide gate dielectrics on sulfur-passivated germanium
- Martin M. Frank
- Steven J. Koester
- et al.
- 2006
- Applied Physics Letters
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
Germanium-on-SOI infrared detectors for integrated photonic applications
- Steven J. Koester
- Jeremy D. Schaub
- et al.
- 2006
- IEEE Journal on Selected Topics in Quantum Electronics