K.Y. Lee, S.J. Koester, et al.
Microelectronic Engineering
Evidence of inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers is reported. Capacitors formed on n-GaAs with atomic layer-deposited HfO 2 displayed C-V characteristics with minimum D it of 7 × 10 11 cm -2/eV, while capacitors with molecular beam epitaxy-deposited HfO 2 on p-GaAs had D it=3 × 10 12 cm -2/eV. Lateral charge transport was confirmed using illuminated C-V measurements on capacitors fabricated with thick Al electrodes. Under these conditions, capacitors on n-GaAs (p-GaAs) showed "low-frequency" C-V behavior, indicated by a sharp capacitance increase and saturation at negative (positive) gate bias, confirming the presence of mobile charge at the semiconductor/dielectric interface. © 2006 American Institute of Physics.
K.Y. Lee, S.J. Koester, et al.
Microelectronic Engineering
Qiqing Christine Ouyang, S.J. Koester, et al.
SISPAD 2002
S.J. Koester, K. Ismail, et al.
Semiconductor Science and Technology
Yanning Sun, E.W. Kiewra, et al.
DRC 2007