Development of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- M. Nasseri
- C. Durfee
- et al.
- 2024
- ASMC 2024
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16 results for C. Durfee
Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing
- Daniel Schmidt
- Curtis Durfee
- et al.
- 2022
- JM3
SiGe Gate-All-around Nanosheet Reliability
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2022
- IRPS 2022
Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
In-line Raman spectroscopy for stacked nanosheet device manufacturing
- Daniel Schmidt
- C. Durfee
- et al.
- 2021
- SPIE Advanced Lithography 2021
OCD enhanced: Implementation and validation of spectral interferometry for nanosheet inner spacer indentation
- Daniel Schmidt
- C. Durfee
- et al.
- 2021
- SPIE Advanced Lithography 2021
Low-temperature growth of strained germanium quantum wells for high mobility applications
- Stephen W. Bedell
- S. Hart
- et al.
- 2020
- PRiME 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- J. Zhang
- S. Pancharatnam
- et al.
- 2019
- IEDM 2019