Titanium silicide/titanium nitride full metal gates for dual-channel gate-first CMOS
- Martin M. Frank
- Cyril Cabral
- et al.
- 2016
- IEEE Electron Device Letters
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162 results for Cyril Cabral
Subtractive W contact and local interconnect co-integration (CLIC)
- Fei Liu
- Benjamin Fletcher
- et al.
- 2013
- IITC 2013
Enhanced grain growth of electroplated copper on cobalt-containing seed layer
- Q. Huang
- B.C. Baker-O'Neal
- et al.
- 2013
- JES
Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements
- Mikhail Treger
- Christian Witt
- et al.
- 2013
- Journal of Applied Physics
Performance and reliability of thick Cu interconnects for RF and analog/mixed signal technology
- E. Cooney
- Jeff Gambino
- et al.
- 2013
- MRS Spring Meeting 2013
Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
Interconnect material choices for future scaled devices
- Gregory Fritz
- Adam Pyzyna
- et al.
- 2012
- ADMETA 2012
Cu-based bonding technology for 3D integration applications
- K.N. Chen
- Zheng Xu
- et al.
- 2012
- 3DIC 2012
Interconnect processes and reliability for RF technology
- Jeffrey P. Gambino
- F. Anderson
- et al.
- 2011
- IPFA 2011
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010