Thermal stress effects of Ge2Sb2Te5 phase change material: Irreversible modification with Ti adhesion layers and segregation of Te
- K.N. Chen
- C. Cabral Jr.
- et al.
- 2008
- Microelectronic Engineering
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162 results for Cyril Cabral
Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at. % Ge
- C. Cabral
- L. Krusin-Elbaum
- et al.
- 2008
- Applied Physics Letters
Single-event-upset and alpha-particle emission rate measurement techniques
- Michael S. Gordon
- Kenneth P. Rodbell
- et al.
- 2008
- IBM J. Res. Dev
Alpha-particle-induced upsets in advanced CMOS circuits and technology
- David F. Heidel
- Kenneth P. Rodbell
- et al.
- 2008
- IBM J. Res. Dev
Electrodeposition of Cu on Ta-based layer II: Cu Electrodeposition on Cu/Ta bilayers
- J. Kelly
- M. Zheng
- et al.
- 2007
- JES
An alternative low resistance MOL technology with electroplated rhodium as contact plugs for 32nm CMOS and beyond
- I. Shao
- J.M. Cotte
- et al.
- 2007
- IITC 2007
Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks
- M. Gribelyuk
- C. Cabral Jr.
- et al.
- 2007
- Thin Solid Films
Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress
- L. Krusin-Elbaum
- C. Cabral
- et al.
- 2007
- Applied Physics Letters
Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack
- C. Cabral Jr.
- K.N. Chen
- et al.
- 2007
- Applied Physics Letters
Alpha particle mitigation strategies to reduce chip soft error upsets
- C. Cabral
- K.P. Rodbell
- et al.
- 2007
- Journal of Applied Physics