ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
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37 results for Sangbum Kim
A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- ISSCC 2016
Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization
- Jesse H. Engel
- Sukru Burc Eryilmaz
- et al.
- 2014
- IEDM 2014
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- Matthew Bright Sky
- Norma Sosa
- et al.
- 2015
- IEDM 2015
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
- Sangbum Kim
- N. Sosa
- et al.
- 2013
- IEDM 2013
Experimental demonstration of array-level learning with phase change synaptic devices
- S. Burc Eryilmaz
- Duygu Kuzum
- et al.
- 2013
- IEDM 2013
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011
Analog Coding in Emerging Memory Systems
- Ryan V. Zarcone
- Jesse H. Engel
- et al.
- 2020
- Scientific Reports
Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer
- Y. Xie
- Wanki Kim
- et al.
- 2018
- Advanced Materials