Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
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182 results for Eduard Cartier
Interface engineering for enhanced electron mobilities in W/HfO 2 gate stacks
- A.C. Callegari
- P. Jamison
- et al.
- 2004
- IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
Inversion channel mobility in high-κ high performance MOSFETs
- Z. Ren
- M.V. Fischetti
- et al.
- 2003
- IEDM 2003
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy
- Franco Stellari
- Ernest Y. Wu
- et al.
- 2021
- IEEE Electron Device Letters
Pulse-Train Method to Measure Transient Response of Field-Effect Transistors
- Keith A. Jenkins
- Eduard Cartier
- et al.
- 2019
- IEEE Electron Device Letters
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
Charge Trap Transistor (CTT): An embedded fully logic-compatible multiple-time programmable non-volatile memory element for high-k-metal-gate CMOS technologies
- Faraz Khan
- Eduard Cartier
- et al.
- 2017
- IEEE Electron Device Letters