Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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182 results for Eduard Cartier

Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- - Y.-H. Kim
  - C. Cabral Jr.
  - et al.
- 2005
- IEDM 2005
Interface engineering for enhanced electron mobilities in W/HfO ₂ gate stacks
- - A.C. Callegari
  - P. Jamison
  - et al.
- 2004
- IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- - E. Gusev
  - C. Cabral Jr.
  - et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- - E. Gusev
  - V. Narayanan
  - et al.
- 2004
- IEDM 2004
Inversion channel mobility in high-κ high performance MOSFETs
- - Z. Ren
  - M.V. Fischetti
  - et al.
- 2003
- IEDM 2003
80 nm poly-silicon gated n-FETs with ultra-thin Al₂O₃ gate dielectric for ULSI applications
- - D.A. Buchanan
  - E. Gusev
  - et al.
- 2000
- IEDM 2000
Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy
- - Franco Stellari
  - Ernest Y. Wu
  - et al.
- 2021
- IEEE Electron Device Letters
Pulse-Train Method to Measure Transient Response of Field-Effect Transistors
- - Keith A. Jenkins
  - Eduard Cartier
  - et al.
- 2019
- IEEE Electron Device Letters
High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks with In-Situ O₃ Treatment
- - Takashi Ando
  - Pouya Hashemi
  - et al.
- 2017
- IEEE Electron Device Letters
Charge Trap Transistor (CTT): An embedded fully logic-compatible multiple-time programmable non-volatile memory element for high-k-metal-gate CMOS technologies
- - Faraz Khan
  - Eduard Cartier
  - et al.
- 2017
- IEEE Electron Device Letters