The Impact of Self-Heating on Charge Trapping in High-k-Metal-Gate nFETs
- Faraz Khan
- Eduard Cartier
- et al.
- 2016
- IEEE Electron Device Letters
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182 results for Eduard Cartier
Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode
- Catherine Dubourdieu
- John Bruley
- et al.
- 2013
- Nature Nanotechnology
Application of VRS methodology for the statistical assessment of BTI in MG/HK CMOS devices
- Andreas Kerber
- Eduard Cartier
- 2013
- IEEE Electron Device Letters
Origins of effective work function roll-off behavior for high-κ last replacement metal gate stacks
- Takashi Ando
- Eduard A. Cartier
- et al.
- 2013
- IEEE Electron Device Letters
Voltage ramp stress for hot-carrier screening of scaled CMOS devices
- A. Kerber
- W. McMahon
- et al.
- 2012
- IEEE Electron Device Letters
On the electron and hole tunneling in a HfO2 gate stack with extreme interfacial-layer scaling
- Takashi Ando
- Ninad D. Sathaye
- et al.
- 2011
- IEEE Electron Device Letters
A Fast four-point sense methodology for extraction of circuit-relevant degradation parameters
- Andreas Kerber
- Eduard Cartier
- 2010
- IEEE Electron Device Letters
Voltage ramp stress for bias temperature instability testing of metal-gate/high- k stacks
- Andreas Kerber
- Siddarth A. Krishnan
- et al.
- 2009
- IEEE Electron Device Letters
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
Impact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters